| PART |
Description |
Maker |
| MF34M1-LZCATXX MF3257-LZCATXX MF3513-LZCATXX MF312 |
512Kb, 8/16-bit data bus static RAM card
128Kb, 8/16-bit data bus static RAM card
STATIC RAM CARDS
8/16-bit Data Bus Static RAM Card 16位产品数据总线静态存储器
256Kb, 8/16-bit data bus static RAM card
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| KM681001B KM681001B-15 KM681001B-20 |
From old datasheet system
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
128K x 8 Bit High-Speed CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM681001A KM681001A-15 KM681001A-20 |
128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC55 |
131,072 WORD x 8 BIT STATIC RAM 131072字8位静态RAM
131072 WORD x 8 BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| M5M5V32R16J-12 M5M5V32R16J-10 M5M5V32R16J-15 M5M5V |
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
524288-BIT CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IDT71016 IDT71016S12PHG IDT71016S12PHGI IDT71016S1 |
CMOS Static RAM 1 Meg (64K x 16-Bit)
64K x 16 Static RAM
Filter Module w/out Resistor Network 64K X 16 STANDARD SRAM, 20 ns, PDSO44
CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
SRAM
INTEGRATED DEVICE TECHNOLOGY INC
|
| MCM67B618B MCM67B618BFN9 |
MCM67B618B 64K X 18 Bit BurstRAM Synchronous Fast Static RAM
64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write
From old datasheet system
|
Motorola, Inc
|
